Method for manufacturing semiconductor device and semiconductor device

ABSTRACT

In a method for manufacturing a semiconductor device, a resin layer including an inorganic filler is molded on a surface of a substrate which includes semiconductor elements attached thereto by an adhesive, and terminals electrically connected to the semiconductor elements on another surface thereof. The molded substrate is cut so as to expose a conductive body electrically connected to an external terminal maintainable at ground potential. The surface of the resin layer of the substrate is sputter-etched in a vacuum environment, in a state where a plurality of the cut substrates is provided in a tray so that the surface of the substrate faces the tray. A metal layer is sputtered so as to be electrically connected to the conductive body on the surface and the cut surface in a state where the substrate is provided in the tray while maintaining the vacuum environment after sputter-etching.

CROSS-REFERENCE TO RELATED APPLICATION

This application is based upon and claims the benefit of priority fromJapanese Patent Application No. 2015-145612, filed Jul. 23, 2015, theentire contents of which are incorporated herein by reference.

FIELD

Embodiments described herein relate generally to a method formanufacturing a semiconductor device and a semiconductor device.

BACKGROUND

A semiconductor chip is supplied as a semiconductor package in somecases.

DESCRIPTION OF THE DRAWINGS

FIG. 1 is a flow chart illustrating a method for manufacturing asemiconductor device according to the embodiment.

FIG. 2 is a schematic sectional view showing a plurality ofsemiconductor chips bonded to a substrate and connected by a wire usedthe method for manufacturing the semiconductor device according to theembodiment.

FIG. 3 is a schematic sectional view showing the structure of FIG. 2encased in a resin.

FIG. 4 is an enlarge view of an area A1 of the structure of FIG. 2encased in the resin of FIG. 3.

FIG. 5 is a schematic plan view illustrating the upper surface of a trayused in the method for manufacturing the semiconductor device accordingto the embodiment.

FIG. 6 is a sectional view of the tray of FIG. 5 taken along line AA′ inFIG. 5.

FIGS. 7A and 7B are schematic sectional views of the surface of theresin used in the method for manufacturing the semiconductor deviceaccording to the embodiment.

FIG. 8 is a schematic sectional view illustrating a completed deviceaccording to the embodiment.

FIG. 9 is a table illustrating a relationship between etching durationtime and the result of a peel test.

FIG. 10 is a schematic sectional view illustrating a modificationexample of the device of FIG. 8.

DETAILED DESCRIPTION

According to an embodiment a semiconductor device is easilymanufactured.

According to one embodiment, a method for manufacturing a semiconductordevice includes molding a sealing resin layer, including: an inorganicfiller therein, on a surface of a substrate which includes a pluralityof semiconductor elements attached thereto by an adhesive, the substratefurther including external input and output terminals disposed onanother surface thereof electrically connected to the semiconductorelements; cutting the molded substrate so as to expose a conductive bodytherein having a terminal portion electrically connectable to anexternal input and output terminal; positioning the cut moldedsubstrates in a tray such that a surface of the sealing resin layer isexposed and an opposed surface of the cut molded substrate faces asurface of the tray; sputter-etching, in a sub-atmospheric pressureenvironment, the exposed surface of the sealing resin layer; andsputtering a metal layer over the sealing resin layer and the cutportion of the molded substrate in a sub-atmospheric pressureenvironment to electrically connect the metal layer to the conductivebody on the surface of the cut surface while the cut molded substrate islocated on the tray. During the sputter-etching, at least a portion ofthe inorganic filler in the sealing resin is exposed.

Hereinafter, embodiments will be described with reference to thedrawings. In the following description, substantially the samecomponents having the same function are denoted by the same referencenumerals.

A semiconductor device 100 and a method for manufacturing the same willbe described with reference to FIGS. 1 to 8. Note that, thesemiconductor device 100 in the state it has as it is formed in eachmanufacturing step is referred to as 100 a, 100 b, and 100 c in thefollowing description.

FIG. 1 is a flow chart schematically illustrating the manufacturingsteps of the semiconductor device 100. The manufacturing steps of thesemiconductor device 100 will be described below with reference to theflow chart of FIG. 1.

In Step S1, as illustrated in FIG. 2, a first semiconductor chip 30 isprovided on one surface of a wiring substrate 10 with an adhesive layer20 therebetween. A second semiconductor chip 50 is provided on the firstsemiconductor chip 30 with a second adhesive layer 40 therebetween. Abonding wire 60 is electrically connected between the wiring substrate10 and the first semiconductor chip 30, and is also connected to thesecond semiconductor chip 50. A semiconductor device 100 a is formed inStep S1.

The wiring substrate 10 is an insulating resin wiring substrate or aceramic wiring substrate which is provided with, for example, surfaces(one surface and another surface which is opposite to the one surface)and a wiring layer (not shown) therein. Specifically, a printed wiringboard using a glass epoxy resin is used as the wiring substrate 10, forexample. A pad, electrically connected between the first and secondsemiconductor chips 30, 50 and the wiring layer, is provided on onesurface of the wiring substrate 10 (for example, a pad 10-1 in FIG. 8).The wiring layer of the surface of the wiring substrate 10 includes aground wiring (for example, wiring 10-1 g in FIG. 8) that may bemaintained at ground potential during operation of the semiconductordevice. The wiring layer within the wiring substrate 10 includes aground wiring (for example, wiring 10-4 g in FIG. 8) that may be atground potential during operation of the semiconductor device. Anexternal connecting terminal (for example, wiring 10-1 b in FIG. 8) isprovided on the other surface of the wiring substrate 10. Glass epoxyresin layers (for example, glass epoxy resin layers 10-2 a and 10-2 b inFIG. 8) are provided between the wiring layer of the surface and thewiring layer within the wiring substrate 10. A portion of the wiringlayer of the one surface of the wiring substrate 10 is covered withsolder resist layers (for example, solder resist layers 10-3 a and 10-3b in FIG. 8).

The first adhesive layer 20 and the second adhesive layer 40 are, forexample, a die attach film (DAF). The first semiconductor chip 30 andthe second semiconductor chip 50 are an arbitrary semiconductor chipsuch as a semiconductor memory chip and a semiconductor memorycontroller. The bonding wire 60 is a metal wire such as an Au wire, a Cuwire, an Ag wire, and a Pd-coated Cu wire. The first adhesive layer 20and the second adhesive layer 40 are respectively provided on the rearsurfaces of the first semiconductor chip 30 and the second semiconductorchip 50 before the wafers on which they reside are singulated intoindividual chips. The wafers are diced with the first adhesive layer 20and the second adhesive layer 40 thereon. The first semiconductor chip30 and the second semiconductor chip 50 in which the first adhesivelayer 20 and the second adhesive layer 40 are respectively provided inadvance are mounted onto the wiring substrate 10. In a case of using aliquid-type die attachment material in the first adhesive layer 20 andthe second adhesive layer 40, the first adhesive layer 20 and the secondadhesive layer 40 are provided in advance on the wiring substrate 10side of the semiconductor chips, and then the diced first semiconductorchip 30 and second semiconductor chip 50 are mounted on the wiringsubstrate thereafter.

After mounting the first semiconductor chip 30 and the secondsemiconductor chip 50, the wiring substrate 10 is heated in an oven, andis then plasma cleaned. For the plasma cleaning, Ar gas, O₂ gas, H₂ gas,or a combination of these gases is used, for example. The plasma cleanedwiring substrate 10, and the first semiconductor chip 30 and the secondsemiconductor chip 50 are electrically connected to each other by thebonding wire 60.

Note that although FIG. 2 illustrates one semiconductor device 100 a,additional semiconductor devices are arranged in a direction orthogonalto a paper surface in FIG. 2 or a horizontal direction of the papersurface, and the first semiconductor chip 30 and the secondsemiconductor chip 50 are provided on a wiring substrate 10 whichincludes a plurality of semiconductor devices 100 mounted thereon.

In Step S2, as illustrated in FIG. 3, a sealing layer 70 is provided onthe wiring substrate 10 to integrally seal the first semiconductor chip30, the second semiconductor chip 50, and the bonding wire 60 therein.The semiconductor device 100 b is thus formed at Step S2.

The sealing layer 70 is formed by putting the connected body of theplurality of semiconductor devices 100 a on the wiring substrate 10 intoa mold, allowing a resin to flow into the mold, and then curing theresin. Accordingly, in the semiconductor device 100 b, the sealing layer70 is provided in a state where the plurality of semiconductor devices100 b is connected to the wiring substrate 10. In addition, the sealinglayer 70 may be formed by allowing the resin to flow into the moldfirst, then introducing the plurality of semiconductor devices 5 on thewiring substrate 10 into the mold, and then curing the resin. Further,the plasma cleaning may be performed before forming the sealing layer70. For the plasma cleaning, Ar gas, O₂ gas, H₂ gas, or a combination ofthese gases are used, for example.

In addition, when the sealing layer 70 is formed using theabove-described mold, a releasing agent is used so that thesemiconductor device 100 a is easily detached from the mold. In thiscase, releasing agent remains attached to the surface of the sealinglayer 70.

The sealing layer 70 will be specifically described with reference toFIG. 4.

FIG. 4 is a sectional view of area A1 of FIG. 3. As illustrated in FIG.4, the sealing layer 70 includes a resin 75 and an inorganic filler 80.The inorganic filler 80 is arranged inside the resin 75.

The resin 75 is a thermosetting resin, and examples thereof include anepoxy resin and an acryl resin.

The inorganic filler 80 is, for example, particles of silica, that is,silicon oxide. In addition to silica, examples of the inorganic filler80 may include particles of aluminum hydroxide, calcium carbonate,aluminum oxide, boron nitride, titanium oxide, and barium titanate.

By adding the inorganic filler 80 to the sealing layer 70, the heatresistance of the sealing layer 70 is improved while the hygroscopicitythereof is reduced, and thus the reliability of the semiconductor device100 is improved. Further, the elasticity of the sealing layer 70 isimproved, and thus it is possible to prevent the semiconductor device100 from being deformed.

In Step S3, the connected body of the plurality of semiconductor devices100 b is divided into individual semiconductor devices 100 b using ablade. The dividing is performed by cutting the connected body with theblade while cooling the blade and the semiconductor device 100 b withcarbonated water or pure water, for example.

In Step S4, marking is performed on the semiconductor device 100 b. Themarking is performed by engraving a product name, a manufacturer, a lotnumber, and the like using a laser marker. The marking is engraved in aportion of the surface of the sealing layer 70 which forms unevenness inthe surface thereof.

In Step S5, the semiconductor device 100 b is placed in an oven andheated (baked). The baking is performed at a temperature from 100° C. to260° C. Because carbonated water or pure water is used in Step S3, thesemiconductor device 100 b contains a large amount of moisture. Thus,the moisture contained, for example, in the resin layer 75 of thesemiconductor device 100 b is degassed, i.e., evaporated therefrom, bybaking the semiconductor device 100 b at a temperature which is equal toor higher than 100° C., and thus the adhesion of a metal layer(described below) thereto can be improved. In addition, by baking thesemiconductor device 100 b at a temperature which is equal to or lowerthan the reflow temperature of solder, for example, at a temperaturewhich is equal to or lower than 260° C., or is preferably equal to orlower than 230° C., it is possible to prevent the reliability of awiring or a transistor included in the semiconductor device 100 b frombeing deteriorated. In addition, when the semiconductor memory chip isincluded in the semiconductor device 100 b, it is possible to preventthe reliability of the semiconductor memory from being deteriorated byavoiding a thermal load due to the high temperature.

In Step S6, the semiconductor device 100 b is provided on a tray 120 asillustrated in FIGS. 5 and 6. The tray 120 is partitioned by a partitionarea 120 a and a partition area 120 b which are formed into asubstantially rectangular shape. The semiconductor device 100 b isarranged between the partition areas in a recess having thesubstantially rectangular shape of the tray 120. Meanwhile, thepartition area 120 a is provided on the outermost of the area on whichthe semiconductor device 100 b is arranged. The partition area 120 b isprovided between the semiconductor devices 100 b. In addition, FIG. 6illustrates that the partition areas 120 a and 120 b project upwardsfrom the surface of the tray 120 on which the semiconductor device 100 bis stacked; however, the shapes of the partition areas 120 a and 120 bare not limited to this configuration. The partition areas 120 a and 120b may be formed into a recessed portion, or any other shape. Thematerial of the tray 120 may include aluminum, copper, stainless steel,iron, nickel, chromium, titanium, and an alloy or a composite materialthereof.

The tray 120 is placed on a carrier 110 after the semiconductor device100 b is placed in the region having the substantially rectangularshape. The material of the carrier 110 may include aluminum, copper,stainless steel, iron, nickel, chromium, titanium, and an alloy or acomposite material thereof.

An area A2 as illustrated in FIG. 6 is provided on the tray 120 andextends outwardly from the external side of the partition area 120 a,and it includes an area in which the height or thickness of the carrier110 is different from that in an area A3 described below. The area A3 isan area overlapping with the location of the semiconductor device 100 bin a plan view, and where the thickness of the tray 120 is greater thanthat of the area A2. As illustrated in FIG. 6, the entirety of the areaoverlapping with the location of semiconductor device 100 b may be thearea A3.

The tray 120 and the carrier 110 are arranged in the area A2 withoutcoming in contact with each other. In addition, the tray 120 and thecarrier 110 are arranged in area A3 in contact with each other. In otherwords, the difference of thickness between the area A2 and the area A3with respect to the carrier 110 is smaller than the difference of heightbetween the area A2 and the area A3 with respect to the tray 120.

Since the tray 120 and the carrier 110 are arranged in the area A3 in astate of contact with each other, it is possible to easily transfer heatfrom the semiconductor device 100 b. Specifically, when forming a metallayer according to a sputtering method in Step S9 described below, it ispossible to suppress the temperature rise of the semiconductor device100 b.

In addition, the difference in the thickness of the carrier 110 betweenthe area A2 and the area A3 is smaller than the difference in thethickness of the tray 120 between the area A2 and the area A3. In thisconfiguration, the tray 120 and the carrier 110 easily come in contactwithin the area A3.

In Step S7, the semiconductor device 100 b is introduced together withthe tray 120 and the carrier 110 into a chamber held at sub-atmosphericpressure. The semiconductor device 100 b is baked in a first chamber.The semiconductor device 100 b is heated, for example, to a temperaturefrom 150° C. to 260° C., and is preferably heated to a temperature whichis equal to or lower than 230° C.

Since the semiconductor device 100 b is heated in a sub-atmosphericpressure chamber, it is possible to evaporate the moisture which isabsorbed into the sealing layer 70 after the baking step S5. Further, inStep S7, the semiconductor device 100 b is heated in the sub-atmosphericpressure chamber, and thus it is possible to further evaporate themoisture which is absorbed into the sealing layer 70. By removing themoisture, it is possible to improve the adhesion between the metal layer(described below) and the sealing layer 70.

After Step S7, the semiconductor device 100 b is transferred, togetherwith the tray 120 and the carrier 110, into an etching chamber. Duringthis transfer, the semiconductor device 100 b is not exposed to theatmosphere. That is, the processing in Step S5 and Step S6 issequentially performed without breaking vacuum. Specifically, forexample, the sub-atmospheric pressure chamber and the etching chamberare provided in the same apparatus. Then, the semiconductor device 100 bis introduced into the etching chamber without being exposed to theexterior of the apparatus. Alternatively, the sub-atmospheric pressurechamber and the etching chamber may be the same chamber.

In Step S8, the semiconductor device 100 b is etched in the etchingchamber. The semiconductor device 100 b is etched (sputter-etching) by aplasma containing, for example, argon (Ar) and nitrogen (N). The flowrate ratio of argon to nitrogen can be set to be 3:7 to 7:3, forexample. When the etching is performed with the flow rate ratio of argonto nitrogen which extends beyond the above range, the adhesion betweenthe sealing layer 70 and the metal layer described below may bedeteriorated. By this etching, the surface of the resin 75 of thesealing layer 70 of the semiconductor device 100 b is etched away in arange of from 1 nm to 100 nm. That is, the etching is performed underthe condition that the etching speed of the resin 75 is faster than thatof the inorganic filler 80.

FIGS. 7A and 7B are schematic sectional views after etching an area A1of the sealing layer 70 in FIG. 3. FIG. 7B illustrates a case where anetching amount is greater than that in FIG. 7A.

As illustrated in FIGS. 7A and 7B, when the semiconductor device 100 bis etched, the resin at the exposed surface of the resin 75 is removedby the etching. When the resin is removed by etching, particles of theinorganic filler 80 are exposed, and unevenness is created on thesurface of the sealing layer 70 as the inorganic filler particles 80protrude from the etched surface of the resin 75. Due to thisunevenness, the adhesion between the sealing layer 70 and the metallayer described below is improved. In addition, the adhesion between theinorganic filler 80 and the metal layer, and the adhesion between theresin 75 and the metal layer is satisfactory, and thus the adhesionbetween the sealing layer 70 and the metal layer is improved.

In addition, as illustrated in 7B, when the etching amount is increased,a larger amount of resin 75 is etched away. That is, the inorganicfiller 80 is further exposed at, and protrudes further from, the surfaceof the sealing layer 70. That is, as the unevenness of the surface ofthe sealing layer 70 becomes larger, the exposure of the inorganicfiller 80 is increased, and thus the adhesion between the surface of thesealing layer 70 and the metal layer is further improved.

In addition, when release agent is attached to the surface of thesealing layer 70 during the forming of the sealing layer 70, the releaseagent is etched away together with the surface of the resin 75 by theabove-described etching, and thus the amount of release agent on thesurface of the sealing layer 70 is reduced. That is, the adhesionbetween the sealing layer 70 and the metal layer is further improved.

After Step S8, the semiconductor device 100 b is transferred, togetherwith the tray 120 and the carrier 110, into a film forming chamber. Inthis case, the semiconductor device 100 b is not exposed to theatmosphere. That is, the processing in Step S6 and Step S7 issequentially performed without breaking vacuum. Specifically, forexample, the etching chamber and the forming film chamber are providedin the same apparatus. Thus, the semiconductor device 100 b istransferred into the film forming chamber without being exposed to theoutside of the apparatus. Alternatively, the etching chamber and theforming film chamber may be the same chamber.

In Step S9, as is illustrated in FIG. 8, a metal layer 90 is formed onthe upper surface and the side surface of the sealing layer 70, and theside surface of the wiring substrate 10. The metal layer 90 is formedusing, for example, a sputtering method, and copper is used as amaterial thereof. In addition, the material of the metal layer 90 mayinclude silver, gold, titanium, nickel, iron, chromium, palladium,platinum, aluminum, zinc, vanadium, niobium, tantalum, cobalt, tin,indium, gallium, molybdenum, tungsten, and a stainless steel alloy. Inaddition, the metal layer 90 can be formed of not only a single film butalso a composite film, for example, a composite film which is obtainedby combining one or more of these materials with a metal layer 90 layerformed of copper to forma surface protective layer over the copperlayer. For example, titanium and a stainless steel alloy can be used asthe surface protective layer. Among the composite film, the thickness ofthe metal layer 90 except for the surface protective layer can be set tobe in a range of from 0.1 μm to 20 μm, for example. When the thicknessof the metal layer 90 is less than 0.1 μm, a resistance value of themetal layer 90 becomes excessively high, and thus it is not easy toobtain an electromagnetic noise shielding effect therefrom. In addition,when the thickness of the metal layer 90 is greater than 20 μm, amembrane stress between the metal layer 90 and the resin layer 70 canbecome excessively large, and thus it is likely that the metal layer 90will peel off. The thickness of the surface protective layer can be setas 0.01 μm to 5 μm. As for the surface protective layer, when thethickness of the protective layer is less than 0.01 μm, the protectingeffect is not satisfactory. In addition, when the thickness of theprotective layer is greater than 5 μm, the membrane stress becomesexcessively large, and thus it is likely that the metal layer 90 will bepeeled off the resin layer 70. Moreover, there is an additional problemof an increase in cost of film formation when the metal and protectivelayers are thick. The metal layer 90 may also be formed using a chemicalvapor deposition (CVD) method, a vacuum evaporation method, and an ionplating method.

As described above, the semiconductor device 100 according to theembodiment is formed. In addition, it is not necessary that the surfaceprotective layer is formed of the metal layer, for example, it may beformed of a resin or ceramic, or oxide or nitride of the metal. When thecomposite film is used as the metal layer 90, the metal layer may beused except for the surface protective layer. In addition, the thicknessof the metal layer 90 may be set such that all of the upper surface andthe side surface thereof overlying the sealing layer 70 and the sidesurface of the wiring substrate 10 have the same thickness, or havedifferent thickness. When each thickness is differently set, it ispreferable that the metal layer on the side surface of the sealing layer70 and the side surface of the wiring substrate 10 is thinner than thaton the upper surface of the sealing layer 70. The reason for this isthat electromagnetic noise is more strongly leaked from the uppersurface side of the sealing layer 70.

Relationship Between Etching Amount and Adhesion

FIG. 9 is a table illustrating a relationship between etching conditionsin Step S8, results of a peel test for the metal layer formed in StepS9, and a percentage of Si on the surface of the sealing layer 70.

Each column in the lateral direction corresponds to each of the etchingconditions a to f, that is, an etching duration time. As the conditionbecomes close to the right side in the table, the etching duration timebecomes longer, and the etching amount becomes larger.

“O” or “X” which is indicated in each cell of the table represents theresult of peeling test. The peeling test is performed according to amethod based on JIS K5600-5-6, in which an adhesive tape is applied to afilm layer and then removed, and the surface area of film removed withthe tape divided by the total area to which the tape is applied yields afraction defective percentage. In the method based on JIS K5600-5-6,according to a method for classifying the test result, a fractiondefective result which is not greater than 15% corresponds to theclassifications of 0 to 2 which are suitable for general purposes, and acase of the fraction defective which is equal to or less than 15% isindicated by “O”, and a case of the fraction defective which is greaterthan 15% is indicated by “X” in FIG. 9. In other words, the condition bto the condition e in FIG. 9 are suitable for the general purposes, andthe condition a or the condition f in FIG. 9 is not suitable for thegeneral purposes.

The percentage indicated in each cell of the table represents thepercentage of Si (silicon oxide) of the surface of the sealing layer 70in comparison to the all atomic species on the surface based on exposedarea before proceeding Step S9. Specifically, the condition a is 4.4%,the condition b is 18.5%, the condition d is 21.1%, the condition e is24.5%, and the condition f is 30.3%. The percentage of Si of the surfacecan be measured through a composition analysis of the surface performedby, for example, XPS.

As illustrated in FIG. 9, the ratio of Si of the surface of the sealinglayer 70 is formed in a range of from 18.5% to 24.5%, and thus it ispossible to forma semiconductor device including the metal layer 90 withhigh adhesion.

EFFECT OF EMBODIMENT

According to the embodiment, a series of Steps S7 to S9 are sequentiallyperformed without exposing the semiconductor device to the atmosphereexterior to the process and handling environment. That is, it ispossible to manufacture the semiconductor device 100 through a series ofStep S7 to Step S9 under an environment in which temperature andhumidity are controlled.

Specifically, after the degassing in Step S7, the semiconductor device100 is not exposed to the atmosphere external to the process device andtransfer apparatus. In addition, after the etching in Step S8, thesemiconductor device 100 is not exposed to the atmosphere external tothe process device and transfer apparatus. Thus it is possible toprevent the sealing layer 70 from absorbing additional moisture. Inaddition, it is possible to improve the adhesion of the metal layer 90.

Further, according to the embodiment, the metal layer 90 is sputtered ina state where the semiconductor device 100 is arranged on the tray 120and the carrier 110. The tray 120 and the carrier 110 are in contactwith each other in an area immediately below the semiconductor device100, and thus heat transfer from the semiconductor device 100 ispromoted during sputtering, and thus it is possible to suppress thetemperature rise of the semiconductor device 100. Additionally, anincreased rate of forming film through the sputtering can be realized,and the sputtering time can thus be shortened. That is, it is possibleto decrease the cost of manufacturing the semiconductor device 100.

In addition, according to the embodiment, the semiconductor device 100is baked in Step S3 before a series of processes in Steps S7 to S9. Themoisture is evaporated from the sealing layer 70 in advance in thebaking step, and thus it is possible to shorten the degassing time inStep S7. In the condition f, the adhesion is deteriorated, which meansthat the inorganic filler 80 is excessively exposed, and thus the metallayer is removed from the resin 75 together with the filler 80.Accordingly, it is possible to form a metal layer with excellentadhesion by setting a composition ratio of surface Si atoms to be in arange of from 8.5% to 24.5%,

It is possible to improve throughputs of the apparatuses in Steps S7 toS9 by shortening the processing time of Step S7. That is, it is possibleto manufacture the semiconductor device 100 at lower cost in a shortertime.

Meanwhile, the apparatus (oven) that bakes in Step S5 can process moresemiconductor devices 100 at once than the apparatuses that perform aseries of processes in Step S7 to S9. The reason for this is that theapparatuses for performing the processes in Step S7 to S9 require achamber for each step, and a control unit or a transporting unit forperforming a series of operations without exposing the semiconductordevices to the environment external of the process chambers and handlingdevice. For this reason, in a case of heating the semiconductor device100 through the baking, when the baking apparatus of Step S5 is used,the total number of the apparatuses can be reduced. In addition, theapparatuses of in Steps S7 to S9 have complicated configurations, andthus are more expensive than the oven. That is, it is possible tomanufacture the semiconductor device 100 at lower cost by reducing thenumber of the aforementioned apparatuses.

Further, according to the embodiment, it is preferable that the Si atomexposed at the surface of the sealing layer 70 of the semiconductordevice 100 is equal to or greater than 18.5%. The reason for this is thehigh adhesion of the metal layer 90 as illustrated in FIG. 9. That is,it is possible to manufacture the semiconductor device 100 with highreliability.

MODIFICATION EXAMPLE

FIG. 10 is a schematic sectional view illustrating Modification exampleof the embodiment. In the above-described semiconductor device 100, thefirst semiconductor chip 30 is arranged on the wiring substrate 10 withthe first adhesive layer 20 therebetween, and is electrically connectedto the wiring substrate 10 by the bonding wire 60. In the modificationexample depicted in FIG. 10, the first semiconductor chip 30 isconnected to the wiring substrate 10 by solder bumps 150. Furtherphysical arrangement methods, and methods for electrically connectingthe first semiconductor chip 30 and the wiring substrate 10, may also beused.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the inventions.

What is claimed is:
 1. A method for manufacturing a semiconductordevice, comprising: molding a sealing resin layer, including aninorganic filler therein, on a surface of a substrate which includes aplurality of semiconductor elements attached thereto by an adhesive, thesubstrate further including external input and output terminals disposedon another surface thereof electrically connected to the semiconductorelements; cutting the molded substrate so as to expose a conductive bodytherein having a terminal portion electrically connectable to anexternal input and output terminal, the external input and outputterminal configured to be connectable to a ground potential; positioningthe cut molded substrates in a tray such that a surface of the sealingresin layer is exposed and an opposed surface of the cut moldedsubstrate faces a surface of the tray; sputter-etching, in asub-atmospheric pressure environment, the exposed surface of the sealingresin layer; and sputtering a metal layer over the sealing resin layerand the cut portion of the molded substrate in a sub-atmosphericpressure environment to electrically connect the metal layer to theconductive body on the surface of the cut surface while the cut moldedsubstrate is located on the tray, wherein during the sputter-etching, atleast a portion of the inorganic filler in the sealing resin is exposed.2. The method according to claim 1, wherein the inorganic filler issilicon oxide, further comprising sputter-etching the resin layer untilthe percentage of silicon at the surface of the resin layer is a rangeof from 18.5% to 24.5%.
 3. The method according to claim 1, wherein thesputtering is performed in a state where a plurality of trays areprovided on a carrier, and at least a portion of the tray immediatelybelow the substrate is in contact with a portion of the carrier whilethe sputtering is performed.
 4. The method according to claim 1, furthercomprising: heating a plurality of cut substrates provided on the tray,positioned such that at least a portion of the resin layer is exposedand an opposed surface thereof faces the tray, to a temperature in arange of from 150° C. to 260° C. in a sub-atmospheric pressureenvironment after the cutting and before the sputter-etching; andcooling the substrates in a sub-atmospheric environment after theheating and before the sputter-etching, wherein the sputter-etching isperformed while maintaining the sub-atmospheric pressure environment. 5.The method according to claim 1, wherein the metal layer includes alayer containing copper, and wherein the sputtering is performed so thatthe layer containing copper is formed on the cut surface of thesubstrate at which the conductive body is exposed.
 6. The method ofclaim 1, wherein the inorganic filler is distributed in a matrix ofresin.
 7. The method of claim 6, wherein the distributed inorganicfiller is in the form of particles, and after sputter etching of theresin layer, portions of the particles protrude from the sputter etchedsurface of the resin layer.